Packaging of high performance system topology for NAND memory systems

ABSTRACT

A topology for memory circuits of a non-volatile memory system reduces capacitive loading. For a given channel, a single memory chip can be connected to the controller, but is in turn connected to multiple other memory devices that fan out in a tree-like structure, which can also fan back in to a single memory device. In addition to the usual circuitry, such as a memory arrays and associated peripheral circuitry, the memory chip also includes a flip-flop circuit and can function in several modes. The modes include a pass-through mode, where the main portions of the memory circuit are inactive and commands and data are passed through to other devices in the tree structure, and an active mode, where the main portions of the memory circuit are active and can receive and supply data. Reverse active and reverse pass-through modes, where data flows in the other direction, can also be used. The pads of the memory chip can be configurable to swap input and output pads to more efficiently form the memory chips into a package.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.13/904,770, filed on May 29, 2013, the entirety of which is incorporatedby reference herein.

FIELD OF THE INVENTION

This invention pertains generally to the field of non-volatile memoryand, more particularly, to the topology of the memory chips within suchsystems.

BACKGROUND

Non-volatile memory systems, such as those formed from NAND flash memorychips, typically include one or more controller chips connected tomultiple memory chips. In some cases, such as in solid state drives(SSDs), the number of memory chips can be quite large. For example, witha NAND density of 128 Gb, or 16 GB, a 8 TB SSD drive with 100%over-provision (redundancy) would have 1024 NAND chips. If the systemhas 16 input/output (IO) channels, each channel has 64 NAND chips. Thecapacitive pin loading load of NAND chips impose limitations on systemclock operation frequency to ensure signal integrity as the drivers maynot be able to handle the cumulative load. Because of this, it is achallenge to push data transfer rates to higher frequencies.

SUMMARY OF THE INVENTION

According to a first set of general aspects, a non-volatile memorysystem includes a memory section having a plurality of non-volatilememory circuits and a bus structure. In the memory section, each of thememory circuits includes an array of non-volatile memory cells and alatch circuit, where the latch circuit is connectable to a bus input toreceive data and commands therefrom and to a bus output to provide dataand responses. In response to commands received on bus input the memorycircuit can operate in a plurality of modes including: a pass-throughmode, where the memory array is inactive and commands and data arepassed by the latch circuit from the bus input to the bus output; and anactive mode, in which the memory array is active and data can betransferred between the memory array and the bus input or bus output bythe latch circuit. The bus structure connects the bus inputs and busoutputs of the non-volatile memory circuits for the transfer of data andcommands. The bus structure includes an input bus for the memory sectionconnected to the bus input of a first of the memory circuits, an outputbus for the memory section connected to the bus output of a second ofthe memory circuit, and first and second intermediate busses. The firstintermediate bus connects the bus output of the first memory circuit tothe bus inputs of a first set of multiple other ones of the memorycircuits, the first set not including the second memory circuit. Thesecond intermediate bus connects the bus input of the second memorycircuit to the bus outputs of a second set of multiple other ones of thememory circuits, the second set not including the first memory circuit.

Further aspects relate to a non-volatile memory system with a memorysection having multiple non-volatile memory circuits. Each of the memorycircuits includes an array of non-volatile memory cells and a latchcircuit, where the latch circuit is connectable to a first input-outputport to receive data and commands and provide data therefrom and to asecond input-output port to provide data and commands and receive datatherefrom. In response to commands received on the first input-outputport the memory circuit can operate in a plurality of modes including:pass-through modes, wherein the memory array is inactive and commandsand data are passed by the latch circuit from the first input-outputport to the second input-output port or from the second input-outputport to the first input output port; and active modes, in which thememory array is active and data can be transferred between the memoryarray and the first input-output port by the latch circuit. The memorysection also has a bus structure connecting the first input-output portsand second input-output ports of the non-volatile memory circuits forthe transfer of data and commands. The bus structure includes an initialbus segment for the memory section connected to the first input-outputport of a first of the memory circuits and a first intermediate bussegment connecting the second input-output port of the first memorycircuit to the first input-output ports of a first set of multiple otherones of the memory circuits.

Other aspects relate to a non-volatile memory integrated circuit havinga plurality of external contact pads, primary circuitry portion, and aswitching circuit. The external contact pads include a first set of aplurality of N external contact pads and a second set of N externalcontact pads. The primary circuitry portion includes a non-volatilememory array and associated peripheral circuitry and has, when operatingin a first mode, N input lines and N output lines. The switching circuitis connected to the first and second sets of external contact padsconnected to the input and output lines. The switching circuit canselectively attach the first and second sets of external contact pads tothe input and output lines in either a first configuration, where the Ninput lines are attached to the first set of external contact pads andthe N output lines are attached to the second set of external contactpads, or in a second configuration, where the N input lines are attachedto the second set of external contact pads and the N output lines areattached to the first set of external contact pads.

Additional aspect concern a non-volatile memory package having multipleexternal bonding pads formed thereupon, the external bonding padsincluding a plurality of external input pads and a plurality of externaloutput pads. The package contains multiple non-volatile memory chipseach having a first set and a second set of N contact pins where each ofthe memory chips can be individually configured to operate in either afirst configuration, where the first set of pins are input pins and thesecond set of pins are output pins, and a second configuration, wherethe first set of pins are output pins and the second set of pins areinput pins. The memory chips include a first memory chip connected withthe input pins thereof connected to the external input pads, a secondmemory chip connected with the output pins thereof connected to theexternal output pads, and one or more additional memory chips, where,aside from the input pins of the first memory chip and the output pinsof the second memory chip, the first, second and additional memory chipsare connected so that the output pins of each memory chip are connectedto the input pins of one or more other memory chips and the input pinsof each memory chip are connected to the output pins of one or moreother memory chips. The memory chips are stacked with chips configuredaccording to the first configuration interleaved with chips configuredaccording to the second configuration.

Various aspects, advantages, features and embodiments of the presentinvention are included in the following description of exemplaryexamples thereof, whose description should be taken in conjunction withthe accompanying drawings. All patents, patent applications, articles,other publications, documents and things referenced herein are herebyincorporated herein by this reference in their entirety for allpurposes. To the extent of any inconsistency or conflict in thedefinition or use of terms between any of the incorporated publications,documents or things and the present application, those of the presentapplication shall prevail.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an example of a solid state drive having multiple channels,each with a large number of memory chips attached.

FIG. 2 is a schematic illustration of a NAND memory chip.

FIG. 3 schematically illustrates the inclusion of the alternateinterface into the memory chip.

FIGS. 4-6 illustrate different modes of operation for the memory chip ofFIG. 3.

FIG. 7 illustrates an exemplary embodiment for a topology of a set ofmemory chips arranged into a tree type of structure.

FIG. 8 shows a fuller development of the topology of the memory circuitswithin the memory system.

FIGS. 9 and 10 respectively show the flow of data in a write and a readoperation for the elements of FIG. 8.

FIG. 11 shows the memory section of FIG. 8 arranged into a singlepackage.

FIG. 12 illustrates how the packages of FIG. 11 can be arranged into atree structure.

FIG. 13 shows another package embodiment, with 5 tiers and a fan out of2, resulting in a 10 die package.

FIG. 14 illustrates the 10 die packages of FIG. 13 arranged into a 5tiers with a fan out of two, for a total of 100 dies.

FIGS. 15A-C illustrate the connections between the input and output padsof the chips in a package from different views.

FIGS. 16A-C illustrate the pad connections in more detail for themultiple pads of a device.

FIG. 17 is a simplified box diagram to illustrate an example of how theswapping of input and output pads can be implemented.

FIGS. 18A and 18B show exemplary sets of pad assignments.

FIG. 19 looks at the swapping mechanism for a given pad in more detail.

FIGS. 20A-C correspond to FIGS. 15A-C, but for an 11-chip package withboth the input and output pads placed together on the package board.

FIG. 21 illustrates a corresponding topology of the chips for an 11-chippackage.

FIG. 22 illustrates an embodiment of a memory system of four 11-diepackages connected to the same port FIGS. 23A and 23B show two exemplaryembodiments of circuits for data propagation with re-synchronization.

FIGS. 24 and 25 illustrates a pair of additional memory chip modes thatcan used in alternate embodiments.

FIG. 26 shows an example of a topology using the modes of FIGS. 24 and25.

FIG. 27 illustrates the operation of FIG. 26.

DETAILED DESCRIPTION

As discussed in the Background, non-volatile memory systems having largenumbers of memory chips, such as a NAND based solid state drive (SSD)can suffer from large amount of capacitive loading on pins of the memorychips, limiting transfer rates. The following addresses this problem byintroducing a topology for the memory chips that can significantlyreduce the capacitive loading, allowing for much higher IO data transferrates.

FIG. 1 can be used to consider the problem further. An SSD system 10includes a controller 1 that has a number (16 in this example) of IOchannels, each connected by a bus structure (such as shown IOC-1 3) to anumber of memory chips, such as the NAND chip 5. Here, each channel has64 memory chips for a total of 1024 chips, so that with a NAND densityof 128 Gb, or 16 GB, 100% over-provision, this results in a 8 TB SSDdrive. FIG. 2 is a schematic illustration of a NAND memory chip 5 asattached to the bus structure 3. Although the present discussion isgiven in the context of NAND type flash memory chips and as SSD drive,as the issue being dealt with is the capacitive loading on the busstructure, the techniques are not specific to this example. Inparticular, what is here referred to as the conventional circuitryportion 7 of the memory chip can be any sort of memory technology. Toprovide a concrete example for purposes of discussion, though, thefollowing will be based on the NAND memory SSD drive example. Moredetail on NAND memory devices can be found in US patent and publicationnumbers 20080158969; U.S. Pat. Nos. 5,570,315; 5,903,495; and 6,046,935,for example. More detail on SSD drives is given in US patent publicationnumber US20090172257, for example.

In a first set of aspects, the memory chip includes a new alternate oradditional interface relative to the chip's existing interface. Thisinterface can be controlled by an internal ROM fuse, for example. Thisnew interface can also help to the overloading of pins with featuresthat are found on convention interfaces. This additional interface isillustrated with respect to FIG. 3.

FIG. 3 schematically illustrates the inclusion of the alternateinterface. The memory chip 15 again includes the “conventional” circuits17 that would be found on a memory circuit, but now also includes aspart of the additional interface a D flip-flop (DFF) 19 for receivingdata and for receiving and buffering control signals. The busconnections to the chip 15 now include an input bus 13 and an output bus21. (FIG. 3 shows the input bus 13 and output bus 21 on opposite sidesof the chip for illustrative purposes, but in practice the correspondingpins can be variously located around the chip.) In the exemplaryembodiment, for versatility the memory chip can be used with thestandard interface, as in FIG. 2, or in this new arranged, where thiscan be controlled by way of an internal ROM fuse, for example. Underthis new arrangement, the pin assignments would differ from theconvention case, where rather that a set of, say, 8 pins being set asidefor IO function, the input bus 16 would instead have 8 input lines andthe output bus 21 would have 8 output lines.

The memory chip 15 can operate in an active mode and a pass-throughmode, with it typically useful to also have a stand-by mode. These modesare illustrated schematically in FIGS. 4-6. FIG. 4 illustrates thestandby mode, where the primary circuit portion 17 is not active anddata is passed from the input bus 13 to the output bus 13. Addresses andcommands, though, are clocked through the chip from the input bus 13 tothe output bus 21.

In the pass through mode, illustrated in FIG. 5, the circuit portion 17is still inactive, but now in addition to passing commands, data is alsopassed though the DFF 19 from the input bus 13 to the output bus 21. Inthe active mode, schematically illustrated in FIG. 6, the primarycircuit portion 17 is now active, as well as the DFF 19 of theinterface. Addresses and commands can again pass through from the inputto the output, but data does not pass when the device is selected: inthe case of a write, data received on the input lines of the bus 13would be transferred on to the array; and, in the case of a read, datawould be transferred of out of the primary circuit portion 17 and on tothe output bus 21.

The ability of the interface based on the DFF 19 to pass commands,addresses and data from the input bus 13 to the output bus 21 allows forthe memory chips to be connected according to a topology that cansignificantly reduce the amount of capacitive loading on the pins. Thisis described with respect to FIG. 7. As shown in FIG. 7, a set of memorychips are arranged into a tree type of structure, shown here to a depthof three tiers with each branch having a depth of 4 shown chips, wherehere each of the chips is being represented by its DFF portion. A firstchip 101 in the arrangement would be connected to receive commands,addresses and data the DI input and a clock signal at CK from thecontroller. This would then be the only one of the tree of memory chipsfor the channel whose input bus is driven by the controller.

The output data lines 105 from 101 at DO are then connected to the datainput DI at each of the (in this example) four chips 121, 123, 125, 127of the second tier. Similarly, the output clock from CKO of 101 issupplied along 105 to the clock input CKI of each of the second tierchips. This process is then repeated at tier 3, where each of the tier 2chips are connected to drive a number (four again, in this example) ofchips, where only the chips 141, 143, 145, 147 being fed by chip 121 areshown to simplify the diagram for purposes of discussion. The data outlines of chip 121 are connected over 135 to the data input pins of eachof 141, 143, 145, 147, with the clock signal transferred from CKO of 121over line 133 to the CKI pin of each of 141, 143, 145, 147. Under thisarrangement, each device only drives four chips at most, relative to thearrangement of FIG. 1 where each IO channel from controller drives 64chips. In addition to the tree-like structure of the tiers, the devicesare also connected serially through their serially data outputs (SDO)and serial data inputs (DSI). The SDO output of chip 101 is carried overthe line 107 to a first of the chips of the second tier, which are allconnected serially, as is shown explicitly at 129. The last chip of tier2 then has its SDO connected over 137 to the SDI input of the first ofthe chips in the series for tier 3, and so on, where one of the serialconnections of tier 3 is shown explicitly at 149. The use of the serialclock can then be used in the selecting of the desired device.

FIG. 8 shows a fuller development of the topology of the memory circuitswithin the memory system. In particular, this example only shows asingle one of the IO channels from the controller 201 connected to amemory section having the memory chips connected according to atree-like topology. This example for the memory section has five tiersthat branch out with a branching ration of 3 at the second and thirdtiers, before shrinking back down in the last two stages. Thisparticular example is symmetric both respect to how it branches out andthen back in and in that the branching ratio for each chip, whether outor in, is the same. Although this symmetric is generally preferable inmany cases as it more evenly distributes loading, other less symmetricarrangements can also be used.

In the exemplary arrangement of FIG. 8, the controller 201 is onlydirectly by the IO channel output bus to the first chip 211 in the treestructure. (In FIG. 8, each memory device is again represented only bythe DFF of its interface.) Here the portion of the bus structure 261includes both the data and clock input, DI and CK. The serial clocksignal is shown separated out from the other command, address, and datasignal to illustrate its serial structure, as opposed to the treestructure used by the other lines. The segments of the main bus thenbranch from the first to the second, and second to the third tier asdescribed above with respect to FIG. 7, and then, going from the thirdto the fourth and fourth to fifth tier, mirror this arrangement byfanning back in to the last device 241. The output bus section 263 fromthe last tier is then the input for the IO channel. The serial outputbus 251 from the controller then works its way serially through thetiers and serially within each of the tiers.

FIG. 9 shows the same elements as in FIG. 8, but without explicitlyincluding the serial connections, and can be used to illustrate the flowof data for a write operation and how the different device modes areused. In this example, device 225 in the third tier is selected for awrite operation. Consequently, device 225 is selected and placed in theactive mode. As the path from the controller 201 to device 225 passesthrough chips 211 and 215, these need to pass the data as well as anycommands and addresses and are in the pass-through mode. Any of theother devices that are not needed can then sleep in the stand-by mode,not passing data and saving power. As stand-by mode allows the anycommands to pass, any status signals needing to be returned to thecontroller can pass through devices 239 and 243 and back along section263 of the bus structure.

FIG. 10 illustrates the read counterpart to the write operation of FIG.9. Device 225 in the third tier is again selected, but this time for aread operation, and is correspondingly in the active mode. As devices239 and 243 need to pass the data back to the controller over bussegment 263, they will be in the pass-through mode. The rest of thememory devices can sleep to save on power, where chips 211 and 215 passthe commands and addresses to the selected device 225.

The memory section of FIG. 8 can be arranged into a single package, asshown in FIG. 11. Here the 17 die are formed into a single, 17 diepackage. As the input is only supplied to a single chip, the inputloading is only one memory chip. Similarly, the output loading is only asingle chip. The pin count is also corresponding reduced relative to apackage where all of the chips directly attach to the bus structure. Theinternal loading is 1 memory chip driving at most 3 other chips. For alarger memory section, the packages also themselves can be arranged intoa tree structure as shown in FIG. 12. Arranged in three tiers with a fanout of three, the 5 17 die packages can provide a channel with a totalof 85 dies, again with an output and input loading of only a singledevice and an internal loading of no more than 3 devices. The structuresof FIG. 12 can then themselves be arranged into a tree structure and theboard level for an even larger capacity memory channel.

FIG. 13 looks at another package embodiment, which again has 5 tiers,but with a fan out of 2, resulting in a 10 die package. These can 10 diepackages can then also be arranged into a 5 tiers with a fan out of two,for a total of 100 dies, as shown in FIG. 14. Consequently, using 16channels supporting a total of 1600 dies would provide for 25.6 TB ofstorage based upon 16 GB dies. A 6 TB system with 100% over-provisioningcan similarly be built with only 8 channels.

Within the package, the input and output pad sets can be swapped fromchip to chip to more efficiently implement the topology. This canshorten and simplify the connections between the outputs of one tierwith the inputs of the following tier. One exemplary embodiment for the10 die package of FIG. 13 is illustrated schematically with respect toFIGS. 15A-C. FIGS. 15A-C show the 10 chips (303, 305, 307, . . . , 323)stacked up on the package board 301. FIG. 15A is a view from the front,toward the bond pads with the input pads shown in black, the output padsas white, and the gray pads at top and bottom are those for the package.Here the collective input and output pads are each represented by asingle pad, one to the right and one to the left of the edge of eachchip. FIG. 15B then would be the view along the bond pad of the stackfrom the left hand side showing only the left IO pad group. FIG. 15C isthen the right hand side counterpart of FIG. 15B. For example, as shownon the fright side of FIG. 15A and in FIG. 15B, the bottom chip 303 hasits input pads connected to the packages input pads. As shown on theleft side of FIG. 15B and in FIG. 15C, the output pads of 303 are thenconnected to the inputs of 305 and 315 for the fan out of two. The otherconnections are similarly represented.

As noted, FIGS. 15A-C represented each of the input and output pads by asingle collective pad. FIGS. 16A and 16B illustrate the situation inmore detail for the multiple pads of a device, here in an example with 8each for input and output for four of the dies, where both sets aregrouped together. FIG. 16A illustrates the problems that can arisewithout the swapping of input and output pads, as the bonding wireswould need to be constantly crossing between chips in the package,makings implement the desired topology very difficult on the packagelevel. To solve this packaging issue, the pads belonging to the samepipelines can be aligned as illustrated in FIG. 16B. Both arrangementsof the pads can use the same version of the chip, but the sets of padscan used either for input or output. The differentiation between inputand output can be done several ways, such as through a command, aninternal fuse control, or through the bonding pad. In the preferredembodiment, a bonding pad is used, which can be set at either Vcc or Vssto determine which set is for input and which is for output. This isillustrated in FIG. 16B by the configuration pad IOCFG, that can be usedto configure which pad group is used for input and which is used foroutput. In FIG. 16B, the elements of each set are shown to be adjacentto each other, but these may distributed differently; for example, theycould alternate as in FIG. 16A, but with the assignments of dies 2 and 4swapped, such as is shown in FIG. 16C. In FIG. 16C, the configuration ofthe sets of pads can be done similarly to as described with respect toFIG. 16B, such as with a configuration pad IOCFG (not shown in FIG.16C).

FIG. 17 is a simplified box diagram to illustrate an example of how thisswapping of input and output pads can be implemented. A memory chip 400has a series of pads represented 401, 403 and 405. The pads include theinput output configuration IOCFG pad 405 and the two equal sets 401 and403 of pads that are connected to the switchable connection circuit 411.The other elements of the circuit are grouped together as block 413 witha set of output lines 421 and a set of 423. Based on the level at theIOCFG pad 405, the lines 421 can be attached to the pad set 401 or thepad set 403, with the lines 423 going to the other set. Although theexemplary embodiment uses a specific bonding pad to determine theconnection, other embodiments can be based on a command or internal fusecontrol.

Both in FIG. 17 and in FIG. 16B, the elements of each set are shown tobe adjacent to each other, but these may distributed differently; forexample, they could alternate as in FIG. 16C, but with the assignmentsof dies 2 and 4 swapped. This is illustrated in FIGS. 18A and 18B thatshow an exemplary set pad assignments for a more conventionalarrangement (in the first column) and then the pad assignments for thecase of a swappable set of input and output pads. The Die Group 1 columnshows one alignment, here implemented by setting the IOCFG pad to VDD(bottom row), and the Die Group 2 column shows the swapped alignments,here implemented by setting the IOCFG pad to VSS. In the conventionalassignments, a number of pads (such as 1O0-1O7) function as input-outputpads, while in the other columns a number of pads have specific input oroutput assignments, where these are swapped based on the on the IOCFGlevel. (Note that although most pads swap depending on their groupassignment, the latch enable signal, CLE/ALE, is the same in bothassignments.) In FIG. 18A, the IN and OUT pads are grouped together, asillustrated in FIG. 16B, while FIG. 18B illustrates an interleavedarrangement, similar to FIG. 16B, but with swapping between Die Groups 1and 2. Additionally, as shown in FIGS. 16B and 17, all of the padsexcept the IOCFG pads swap, but there can also be other pins (notshown), such as a clock signal or supply level, that go straight throughand stay with the same pad assignment independently of the IOCFG level.

FIG. 19 looks at the swapping mechanism for a given pad in more detail.Pad 501 is one of the swappable pads of the device, which here has theinternal data-in DIN bus 521, data-out DOUT bus 523, and control CTRLbus 525. These buses are then connectable to the pad 501 through eitheran output buffer 511 or an input buffer 513. Based on the value on line503, such as set by a ROMFUSE or the IOCFG, the pad 501 either functionsas an input to supply data and commands to the DIN 521 and CTRL 525buses or as an output to receive data from the DOUT bus 523.

As noted above, in the exemplary embodiment the memory chip can beoperated in one mode with the pins assigned as developed above, with anumber of pins being set aside as input bus lines and a similar numberset aside as output bus lines, or in mode using a standard interface, asin FIG. 2 and with pad assignments such as in the “conventional” columnsof FIGS. 18A and 18B. This can be controlled by way of an internal ROMfuse, for example, such as those represented at 415 of FIG. 17. Thisincreases the versatility of the chip. As the need to swap theconnections to the pads 401 and 403 would not be needed when the padsare assigned in the conventional mode, the swap function of 411 wouldnot be used and the pad 405 would be used and could be reassigned to adifferent function the conventional pad assignment mode. Although thesort of tree like structure described above can be optimal for largesize systems, for smaller systems the conventional assignments can bepreferable for medium or smaller sized systems.

FIGS. 20A-C correspond to FIGS. 15A-C, but with an alternate assignmentof pads with both the input and output pads placed together on thepackage board 301. More specifically, the lower chips are arranged thesame, but with one more chip 325 added, making a 11-chip package. Inthis arrangement, the input of the lowest chip 303 and the output of thetop chip 325 are both to the right. FIG. 21 then illustrates thecorresponding topology of the chips in a package. As with 10 die packageof FIG. 13, this alternate embodiment also uses a maximum fan-out of 2,but includes the last chip to the left whose output now also lies alongthe left side of the package of this alternate embodiment. As notedabove, the tree structure need not be symmetric and in otherembodiments, other or additional 1-1 chip arrangements can be addedbefore or after the fan out or even in the central portions.

FIG. 22 illustrates an embodiment of a memory system of four 11-diepackages as shown in FIG. 21 all connected to the same port: The fan-outis only 4 on the controller, but 2 inside package, so that maximum totalfan-out is four. This results in 44 dies on the same channel, which,under the conventional arrangement of FIG. 1 would need a fan-out of 44.

For any of these arrangements, as the signals travel through thebranches to the different chips of the tree, the signals shouldpreferably maintain a degree of synchronization. The re-synchronizationcan be done through a delay-tunable clock buffer arranged such that dataare resynchronized. The delay elements, which were not explicitly shownin the earlier figures, can mostly be placed at the input and/or theoutput of the clock buffer. FIGS. 23A and 23B show two exemplaryembodiments of circuits for data propagation with re-synchronization.Both circuits use a double data rate (DDR) arrangement, with data (DIN)and clock (CKIN) inputs and data (DOUT) and clock (CKOUT) outputs. Thearrangement of circuit of FIG. 23B additionally includes an inverse forclock signal for propagating through the tree structure, where theinverse for the input and output clocks are shown at CKIN# and CKOUT#.

FIGS. 24 and 25 illustrates a pair of additional memory chip modes thatcan used in alternate embodiments, with a corresponding exemplarytopology shown in FIG. 26 whose operation is illustrate with respect toFIG. 27. Referring back to FIGS. 4-6, these illustrate a standby mode, apass-through mode, and an active mode. As described further above, inthe pass-through mode, address/commands and data are passed from theinput bus 13 to the output bus 21, while the primary circuit section 17is inactive; and in the active mode, addresses and commands can pass,but the primary circuit section is active where data does not pass,either coming in from the input bus 13 into primary circuit section 17,or out from the primary circuit section 17 on to the output bus 21. InFIGS. 24 and 25, the chip is modified to additionally, or alternately,include a reverse-pass though mode and a reverse active mode. In FIGS.24 and 25, the corresponding elements are numbered the same as in FIGS.4-6, but where the primes have been added as the elements 13′, 21′, and19′ also although a reverse flow, with the input 13′ now also can havean output function and conversely for the output 21′.

More specifically, FIG. 24 illustrates a reverse pass-through mode. Aswith (forward) pass-through mode, the primary circuit section 17 canagain be inactive. Data is again passed through, but now in the reversedirection, from the second input/output port connected at 21′, clockedthrough the flip-flop 19′ in the reverse direction, and out the firstI/O port connected at 13′. In the exemplary embodiment, there is not aneed to pass addresses and commands in the reverse direction.

FIG. 25 illustrates a reverse active mode, where, as with the (forward)active mode, the circuit portion 17 is again active, but data is outputfrom the memory via the first I/O part 13′, which was only used forinput in the (forward) active mode. As with the reverse pass-throughmode, there is not a need to pass addresses and commands in the reversedirection. As the reverse-active mode allows for the data to be outputfrom the first I/O node 13′, depending on the arrangement of the chipswithin the memory system, there may no longer be the need to for dataalso to output at the second I/O port 21′. (This is the case for thearrangements described below with respect to FIGS. 26 and 27.)Consequently, there is not a need for the (forward) active mode to beable to output data at the second I/O port 21′, so functionality can beomitted, in which case the active and reverse active modes can beconsidered as the input and output phases of an active mode. As with theselection of a more traditional or the modes of FIGS. 4-6, the selectionof the reverse modes instead of, or in addition to, the arrangementswhere data goes out the second I/O port can be based on a ROM fuse, acommand or commands, a level on one or more pads, and so on.

The inclusion of the reverse modes allows additional topologies to beused. The topologies discussed above mainly looked at the case of a treelike structure where the chips fanned out from a single initial chip,then fanned back down to a final chip and data went in one side (thechip's input bus) and out the other (output bus) as illustratedschematically as a left to right flow in the figures. With the reversemodes, the memory devices can again be structured to fan out in a treestructure, but need not fan back in, where data can be sent back out inthe reverse direction to the same “trunk” device, and then out to thecontroller or host. This is illustrated with respect to FIGS. 26 and 27.

FIG. 26 illustrates an embodiment with a fan out of 3 from each memorydevice and can be compared to FIG. 8: In both of FIGS. 26 and 8, theoutputs of each memory device is connected to the input of 3 additionalmemory devices for three levels; however, they differ in that FIG. 8fans back to the final chip, whose output then loops back to thecontroller. In contrast, FIG. 8 lacks these last two levels of FIG. 8.(As with the earlier figures of this type, FIG. 8 is meant to illustratethe topology of the devices connections, not their actual physicalarrangement.) Instead, by adding the two reverse modes, commands andaddresses will again flow from controller to the last devices in thelast tier, with input data flowing in a similar way; but output datawill flow back through the same path as the input data except in thereverse direction, as illustrated schematically in FIG. 27.

The top part of FIG. 27 shows an example of the flow of data andcommands for a channel from the controller out to a selected device inthe third tier, again based on the addresses and through the use of theserial connections, as illustrated by the large arrow. The lower part ofFIG. 27 similarly illustrates the flow of data and responses back to thecontroller. By using the reverse modes, there is no longer the use of afeedback path as data output from the memory devices flows back the samepath as for the input data, effectively reducing the loading on thecontroller path by half. Under the type of topology illustrated the byFIG. 26 using the reverse modes, because data output from memory devicesflows through the same path as data input, there is no need to have theany memory devices receiving input from multiple devices to providesmall fan-out to the controller. This allows for a constant fan-outthroughout the network, maintaining similar signal integrity throughoutthe whole network.

For any of the embodiments discussed above, the tree like arrangementcan have significant advantages over the more common arrangementillustrated with respect to FIG. 1. In particular, the load stays lowand uniform even when large numbers of dies are used on a channel: forexample, although the load increases linearly with the number of die forthe arrangement of FIG. 1, the tree-like structure presented here has alargely constant load based on the degree of fan out, so that if thenumber of die in the channel were, say, 200, the worst case load is onlya few die rather than the full 200. This can lead to higher performanceand allow the use of high clock rates. Although the data and commandsmay need to propagate through a few tiers to get to a selected device,this only a minor performance penalty as, in addition to higher clockrates, a large degree of parallelism and pipelining can be used in thetree-like structure. Additionally, the use of the tree structure and theability to put to sleep non-selected devices (as described above withrespect to FIGS. 9 and 10) can significantly reduce power consumption ofa channel.

A further advantage of the tree-like relates to how defective chips canbe handled. Defects will largely occur in the primary circuit portion,rather than more basic circuitry of the interface's flip-flop. If a chipis found to be defective during operation, as long as the DFF portion ofthe circuit can pass signals, the chips that fan out, the device can beplaced into stand-by mode and mapped out. Additionally, under thisarrangement, testing procedures can be simplified as the primary circuitportion need not be tested since due to the available high degree ofredundancy, any chips that turn out to be defective can just be treatedthe same devices that fail during later operation by being put into apermanent standby mode.

The foregoing detailed description of the invention has been presentedfor purposes of illustration and description. It is not intended to beexhaustive or to limit the invention to the precise form disclosed. Manymodifications and variations are possible in light of the aboveteaching. The described embodiments were chosen in order to best explainthe principles of the invention and its practical application, tothereby enable others skilled in the art to best utilize the inventionin various embodiments and with various modifications as are suited tothe particular use contemplated. It is intended that the scope of theinvention be defined by the claims appended hereto.

What is claimed is:
 1. A non-volatile memory package comprising: aplurality of external bonding pads, the plurality of external bondingpads comprising a plurality of external input pads and a plurality ofexternal output pads; and a plurality of non-volatile memory chips, eachof the plurality of non-volatile memory chips comprising a first set ofN contact pins and a second set of N contact pins, wherein each of theplurality of non-volatile memory chips is individually configured tooperate in either a first configuration in which the first set of Ncontact pins are input pins and the second set of N contact pins areoutput pins or a second configuration in which the first set of Ncontact pins are output pins and the second set of N contact pins areinput pins, wherein the plurality of non-volatile memory chips comprise:a first memory chip, wherein the input pins of the first memory chip areconnected to the plurality of external input pads; a second memory chip,wherein the output pins of the second memory chip are connected to theplurality of external output pads; and one or more additional memorychips between the first memory chip and the second memory chip; whereinthe output pins of the one or more additional memory chips are connectedto the input pins of at least one other memory chip of the one or moreadditional memory chips; and wherein the plurality of non-volatilememory chips are stacked such that the plurality of non-volatile memorychips configured according to the first configuration are interleavedwith the plurality of non-volatile memory chips configured according tothe second configuration.
 2. The non-volatile memory package of claim 1,wherein the plurality of external input pads and the plurality ofexternal output pads are formed along a same edge of the non-volatilememory package.
 3. The non-volatile memory package of claim 1, whereinthe plurality of external input pads are formed along a different edgeof the non-volatile memory package than the plurality of external outputpads.
 4. The non-volatile memory package of claim 1, further comprisinga switchable connection circuit connected to the plurality of externalinput pads, the plurality of external output pads, the first set of Ncontact pins, and the second set of N contact pins, wherein theswitchable connection circuit is configured to selectively connect thefirst set of N contact pins and the second set of N contact pins to theplurality of external input pads and the plurality of external outputpads to achieve the first configuration and the second configuration. 5.The non-volatile memory package of claim 4, further comprising aconfiguration pad connected to the switchable connection circuit,wherein based upon a voltage level of the configuration pad, theswitchable connection pad connects the first set of N contact pins andthe second set of N contact pins to the plurality of external input padsand the plurality of external output pads to achieve the firstconfiguration and the second configuration.
 6. The non-volatile memorypackage of claim 4, wherein the switchable connection circuit connectsthe first set of N contact pins and the second set of N contact pins tothe plurality of external input pads and the plurality of externaloutput pads to achieve the first configuration and the secondconfiguration based upon a command received by the switchable connectioncircuit.
 7. The non-volatile memory package of claim 4, wherein theswitchable connection circuit connects the first set of N contact pinsand the second set of N contact pins to the plurality of external inputpads and the plurality of external output pads to achieve the firstconfiguration and the second configuration based upon a fuse value setwithin the plurality of non-volatile memory chips.
 8. The non-volatilememory package of claim 4, wherein the switchable connection circuit isconfigured to connect the first set of N contact pins to the pluralityof external input pads and the second set of N contact pins to theplurality of external output pads to achieve the first configuration. 9.The non-volatile memory package of claim 4, wherein the switchableconnection circuit is configured to connect the first set of N contactpins to the plurality of external output pads and the second set of Ncontact pins to the plurality of external input pads to achieve thesecond configuration.
 10. The non-volatile memory package of claim 4,wherein the switchable connection circuit comprises an input buffer andan output buffer to facilitate a switch between the first configurationand the second configuration.
 11. The non-volatile memory package ofclaim 1, wherein the plurality of non-volatile memory chips areinterconnected according to a tree-like structure where the output pinsof at least one of the plurality of non-volatile memory chips areconnected to the input pins of multiple other ones of the plurality ofnon-volatile memory chips and where the input pins of at least one ofthe plurality of non-volatile memory chips are connected to the outputpins of multiple other ones of the plurality of non-volatile memorychips.
 12. The non-volatile memory package of claim 11, wherein thetree-like structure comprises a plurality of tiers including a firsttier having the first memory chip, a last tier having the second memorychip, and at least one additional tier in between the first tier and thelast tier, wherein the first memory chip is connected to the secondmemory chip via the one or more additional memory chips interconnectedin the at least one additional tier.
 13. The non-volatile memory packageof claim 1, further comprising additional non-volatile memory packages,and wherein all of the non-volatile memory packages are interconnectedin a tree-like structure, wherein output ends of a first portion of thenon-volatile memory packages are connected to input ends of a secondportion of the non-volatile memory packages.
 14. The non-volatile memorypackage of claim 1, wherein each of the plurality of memory chips isserially connected via a serial line.
 15. A non-volatile memory systemcomprising: a plurality of memory chips, each of the plurality of memorychips having a set of output lines and a set of input lines; a first setof external contact pads; a second set of external contact pads; aswitchable connection circuit connected to the first set of externalcontact pads, the second set of external contact pads, the set of outputlines, and the set of input lines in either of a first configuration ora second configuration; and a configuration pad connected to theswitchable connection circuit, wherein a voltage level of theconfiguration pad controls the switchable connection circuit to switchbetween the first configuration and the second configuration, wherein inthe first configuration, the set of output lines are connected to thefirst set of external contact pads and the set of input lines areconnected to the second set of external contacts pads; wherein in thesecond configuration, the set of input lines are connected to the firstset of external contact pads and the set of output lines are connectedto the second set of external contact pads; wherein the plurality ofmemory chips are configured in a first topology, and wherein thenon-volatile memory system comprises a plurality of memory packagesconfigured in a second topology and each of the plurality of memorypackages comprises the plurality of memory chips.
 16. The non-volatilememory system of claim 15, wherein the first set of external contactpads and the second set of external contact pads are formed along a sameedge of each of the plurality of memory packages.
 17. The non-volatilememory system of claim 15, wherein the first set of external contactpads and the second set of external contact pads are formed alongdifferent edges of each of the plurality of memory packages.
 18. Amethod comprising: arranging a plurality of memory chips in a pluralityof tiers, wherein each of the plurality of memory chips is seriallyconnected, and wherein each of the plurality of memory chips in each ofthe plurality of tiers other than a last tier is further connected to atleast one of the plurality of memory chips in a next tier via a firstset of N contact pins and a second set of N contact pins of each of theplurality of memory chips; connecting each of the plurality of memorychips for operating in either a first configuration or a secondconfiguration, wherein in the first configuration the first set of Ncontact pins are input pins and the second set of N contact pins areoutput pins, and wherein in the second configuration the first set of Ncontact pins are output pins and the second set of N contact pins areinput pins; connecting, via a switchable connection circuit, the firstset of N contact pins to a set of N external input pads and connectingthe second set of N contact pins to a set of N external output pads forachieving the first configuration; and connecting, via the switchableconnection circuit, the first set of N contact pins to the set of Nexternal output pads and connecting the second set of N contact pins tothe set of N external input pads for achieving the second configuration.19. The method of claim 18, further comprising adjusting a voltage levelof a configuration pad connected to the switchable connection circuitfor facilitating the switch between the first configuration and thesecond configuration.
 20. The method of claim 18, further comprisingadjusting a fuse value of an internal fuse connected to the switchableconnection circuit for facilitating the switch between the firstconfiguration and the second configuration.